Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures

Modeling and Characterization of In0.12al0.88n/gan Hemts at Elevated Temperatures

Promising material properties of GaN, e.g., wide bandgap, high saturation velocity, and high thermal stability, make it an excellent material for high-power, high-frequency, and high-temperature applications. For some specific applications which require the device to operate at elevated temperatures, modeling and simulation provide very meaningful insights about the thermal device behavior. In ...

Electronic Devices Fabricated at Cmos Backend-compatible Temperatures

Enhancements and Degradations in Ultrashort Gate GaAs and InP HEMTs Properties at Cryogenic Temperatures : an Overview

Enhanced performances of 111-V field effects transistors are generally expected at cryogenic temperatures thanks to the better confinement and the velocity of carriers. An overview of our recent work on ultrashort gate-length HEMTs on GaAs and InP substrates at low temperature is presented in this paper. The compared behavior of the devices and the relative enhancement or degradation of their l...

Evaporative cooling of antiprotons to cryogenic temperatures.

We report the application of evaporative cooling to clouds of trapped antiprotons, resulting in plasmas with measured temperature as low as 9 K. We have modeled the evaporation process for charged particles using appropriate rate equations. Good agreement between experiment and theory is observed, permitting prediction of cooling efficiency in future experiments. The technique opens up new poss...

Characterization of the Opa350 Operational Amplifier at Cryogenic Temperatures

As part of the development of EMIR, an infrared multiobject spectrograph for the Gran Telescopio de Canarias (GTC), the OPA350 operational amplifier is being successfully used at cryogenic temperatures (77K). The use of off-theshelf electronics (not specifically designed for cryogenics) is advantageous since it allows us to get signal amplification very close to the detector without the need of...